Contents

• Unit I INTRODUCTION TO TECHNOLOGIES

  Semiconductor Substrate-Crystal defects, Electronic Grade Silicon, Czochralski Growth, Float Zone Growth, Characterization & Evaluation of Crystals; Wafer Preparation-Silicon Shaping, Etching and Polishing, Chemical cleaning.

   

  Unit 2. DIFFUSION & ION IMPLANTATION

  Ficks diffusion Equation in One Dimension, Atomic model, Analytic Solution of Ficks law, correction to simple theory, Diffusion in SiO2, Ion Implantation and Ion Implantation Systems Oxidation. Growth mechanism and Deal-Grove Model of oxidation, Linear and Parabolic Rate co-efficient, Structure of SiO2, Oxidation techniques and system, Oxide properties.

   

  Unit 3. CHEMICAL VAPOUR DEPOSITION AND LAYER GROWTH

  CVD for deposition of dielectric and polysilicon- a simple CVD system, Chemical equilibrium and the law of mass action, Introduction to atmospheric CVD of dielectric, low pressure CVD of dielectric and semiconductor, Epitaxy-Vapour Phase Expitaxy, Defects in Epitaxial growth, Metal Organic Chemical Vapor Deposition, Molecular beam epitaxy.

   

  Unit 4. PATTERN TRANSFER & ETCHING

  Introduction to photo/optical lithography, Contact/ proximity printers Projection printers, Mask generation, photo resists. Dry & Wet etching, methods for anisotropic etching, Plasma etching, Reaction ion etching (RIE).

   

  Unit 5. VLSI PROCESS INTEGRATION

  Junction and Oxide Isolation, LOCOS methods, Trench Isolation, SOI, Metallization, Planarization. Fundamental consideration for IC Processing, NMOS IC Technology, CMOS IC Technology, Bipolar IC Technology.